GeneSiC Semiconductor is a leading manufacturer of Silicon Carbide (SiC) power devices and modules. The company was founded in 2004 and is headquartered in Dulles, Virginia, USA. GeneSiC Semiconductor is dedicated to providing high-performance, high-reliability, and cost-effective SiC-based power electronics solutions for a wide range of applications, including renewable energy, transportation, industrial, and military. SiC is a wide-bandgap semiconductor material that offers superior performance compared to traditional silicon-based power devices. SiC devices have higher breakdown voltage, faster switching speed, lower on-resistance, and better thermal conductivity, which results in higher efficiency, smaller size, and lower cost of ownership. GeneSiC Semiconductor has developed a comprehensive portfolio of SiC-based power devices, including Schottky diodes, MOSFETs, junction transistors, and thyristors, as well as SiC-based power modules that integrate multiple devices into a single package. GeneSiC Semiconductor's products are designed to meet the most demanding requirements of modern power electronics systems. The company's SiC-based power devices and modules are capable of operating at high temperatures, high voltages, and high frequencies, making them ideal for use in harsh environments. GeneSiC Semiconductor's products are also highly reliable, with low failure rates and long lifetimes, which is critical for applications that require continuous operation. GeneSiC Semiconductor has a strong commitment to research and development, and the company invests heavily in new product development and technology innovation. The company has a team of experienced engineers and scientists who are dedicated to advancing the state-of-the-art in SiC-based power electronics. GeneSiC Semiconductor also collaborates with leading universities and research institutions to stay at the forefront of SiC technology. In conclusion, GeneSiC Semiconductor is a leading manufacturer of SiC-based power devices and modules, offering high-performance, high-reliability, and cost-effective solutions for a wide range of applications. The company's commitment to research and development, combined with its expertise in SiC technology, makes it a trusted partner for customers who require the best in power electronics.

>G3R350MT12D
:G3R350MT12D
:Transistors - FETs, MOSFETs - Single
43.51
>G2R1000MT17D
:G2R1000MT17D
:Transistors - FETs, MOSFETs - Single
43.51
>G3R350MT12J
:G3R350MT12J
:Transistors - FETs, MOSFETs - Single
52.89
>G2R1000MT17J
:G2R1000MT17J
:Transistors - FETs, MOSFETs - Single
55.25
>G3R75MT12D
:G3R75MT12D
:Transistors - FETs, MOSFETs - Single
94.7
>G3R75MT12K
:G3R75MT12K
:Transistors - FETs, MOSFETs - Single
100.02
>G3R160MT17D
:G3R160MT17D
:Transistors - FETs, MOSFETs - Single
102.39
>G3R75MT12J
:G3R75MT12J
:Transistors - FETs, MOSFETs - Single
103.07
>G3R40MT12D
:G3R40MT12D
:Transistors - FETs, MOSFETs - Single
156.88
>G3R40MT12J
:G3R40MT12J
:Transistors - FETs, MOSFETs - Single
164.4
>G3R30MT12K
:G3R30MT12K
:Transistors - FETs, MOSFETs - Single
206.04
>G3R30MT12J
:G3R30MT12J
:Transistors - FETs, MOSFETs - Single
207.99
>G3R45MT17D
:G3R45MT17D
:Transistors - FETs, MOSFETs - Single
292.63
>G3R45MT17K
:G3R45MT17K
:Transistors - FETs, MOSFETs - Single
298.8
>G3R20MT12K
:G3R20MT12K
:Transistors - FETs, MOSFETs - Single
325.25

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